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| Power Transistors 2SB1393, 2SB1393A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q 7.50.2 Solder Dip 4.0 14.00.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1393 2SB1393A 2SB1393 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) Ratings -60 -80 -60 -80 -5 -5 -3 25 2.0 150 -55 to +150 Unit V emitter voltage 2SB1393A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C 16.70.3 Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1393 2SB1393A 2SB1393 2SB1393A 2SB1393 2SB1393A (TC=25C) Symbol ICEO ICES IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = -30V, IB = 0 VCE = -60V, IB = 0 VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -3A VCE = -4V, IC = -3A IC = -3A, IB = - 0.375A VCE = -5V, IC = - 0.1A, f = 1MHz IC = -1A, IB1 = - 0.1A, IB2 = 0.1A, VCC = -50V 20 0.5 1.2 0.3 -60 -80 70 10 -1.8 -1.2 V V MHz s s s 250 min typ max -300 -300 -200 -200 -1 Unit A A mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 1 Power Transistors PC -- Ta 40 -6 VCE=-4V (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) 2SB1393, 2SB1393A IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=10 -30 -10 -3 -1 VCE(sat) -- IC Collector power dissipation PC (W) -5 30 Collector current IC (A) TC=100C -4 20 (1) -3 -2 25C -1 -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 TC=100C 25C 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 -25C 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -1 -3 -10 Ambient temperature Ta (C) Base to emitter voltage VBE (V) Collector current IC (A) hFE -- IC 10000 VCE=-4V 1000 fT -- IC 10000 Cob -- VCB Collector output capacitance Cob (pF) VCE=-5V f=1MHz TC=25C IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 3000 Transition frequency fT (MHz) 300 3000 1000 100 1000 300 TC=125C 25C 30 300 100 -25C 30 10 100 3 30 10 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 10 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) -10 ICP t=1ms -3 IC 10ms Non repetitive pulse TC=25C 10000 Rth(t) -- t Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink -1 - 0.3 - 0.1 - 0.03 - 0.01 DC Thermal resistance Rth(t) (C/W) Collector current IC (A) 1000 100 (1) 10 (2) - 0.003 - 0.001 -1 2SB1393A 2SB1393 1 -3 -10 -30 -100 -300 -1000 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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